NSN: 5962-01-370-0383

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Output Logic Form

  bipolar metal-oxide semiconductor

• Specification/Standard Data

  56232-1219252 manufacturers specification control

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Hybrid Technology Type

  monolithic

• End Item Identification

  an/fps-124

• Memory Device Type

  prom

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum total supply and 4.5 volts minimum positive power supply span and -0.5 volts minimum total supply and 5.5 volts maximum positive power supply span

• Bit Quantity (Non-Core)

  8192

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Departure From Cited Document

  altered by programming,marking & testing

• Inclosure Material

  ceramic

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Features Provided

  programmed and schottky

• Case Outline Source And Designator

  d-9 mil-m-38510

• Inclosure Configuration

  dual-in-line

• Time Rating Per Chacteristic

  45.00 nanoseconds af output megawatts

• Terminal Type And Quantity

  24 printed circuit

• Part Name Assigned By Controlling Agency

  icrocircuit,digital,schottky,bipolar 8,192 bit (1k x 8) programmable read-only memory (prom),monolithic silicon

• Nondefinitive Spec/Std Data

  203 number