NSN: 5962-01-370-1468

Technical Characteristics

• Memory Device Type

  prom

• Current Rating Per Characteristic

  -30.00 milliamperes collector cutoff current, dc, with specified resistance between base and emitter microamperes and 5.00 milliamperes reverse current, dc microamperes

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Case Outline Source And Designator

  d-9 mil-m-38510

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Bit Quantity (Non-Core)

  16384

• Maximum Power Dissipation Rating

  1.02 watts

• Features Provided

  bipolar

• Output Logic Form

  bipolar metal-oxide semiconductor

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Hybrid Technology Type

  monolithic

• Time Rating Per Chacteristic

  65.00 nanoseconds nominal access

• Part Name Assigned By Controlling Agency

  microcircuit,digital,schottky,bipolar 16384 bit prom