NSN: 5962-01-371-4791

Technical Characteristics

• Features Provided

  monolithic and electrostatic sensitive and burn in and programmed

• Inclosure Configuration

  dual-in-line

• Memory Device Type

  eprom

• Terminal Type And Quantity

  28 printed circuit

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Bit Quantity (Non-Core)

  131072

• Storage Temp Range

  -65.0/+125.0 deg celsius

• Operating Temp Range

  +0.0/+70.0 deg celsius

• Input Circuit Pattern

  17 input

• Output Logic Form

  n-type metal oxide-semiconductor logic