NSN: 5962-01-371-5396

Technical Characteristics

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Departure From Cited Designator

  altered by programming,testing & marking

• Output Logic Form

  bipolar metal-oxide semiconductor

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Input Circuit Pattern

  16 input

• Memory Device Type

  pal

• Hybrid Technology Type

  monolithic

• Purchase Description Identification

  05869-53206-1

• Maximum Power Dissipation Rating

  1.1 watts

• Features Provided

  bipolar and monolithic and programmed

• Part Name Assigned By Controlling Agency

  microcircuit,bipolar pal 16-input 8-output registered and-or gate array

• End Item Identification

  enditem e/i fscm 03950

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum absolute input and 10.75 volts maximum absolute input

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Case Outline Source And Designator

  d-8 mil-m-38510

• Inclosure Material

  ceramic

• Specification/Standard Data

  81349--38510/50602bra government specification

• Terminal Surface Treatment

  solder

• Terminal Type And Quantity

  20 printed circuit

• Inclosure Configuration

  dual-in-line

• Current Rating Per Characteristic

  100.00 milliamperes reverse current, dc nominal

• ~1

  data on certain environmental and performanc