NSN: 5962-01-372-1262
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Criticality Code Justification
feat
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Bit Quantity (Non-Core)
262144
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Hybrid Technology Type
monolithic
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Nuclear Hardness Critical Feature
hardened
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Maximum Power Dissipation Rating
1.0 watts
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Terminal Surface Treatment
solder
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Specification/Standard Data
67268-5962-8866203ua government standard
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Time Rating Per Chacteristic
55.00 nanoseconds nominal access
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End Item Identification
hac/rmpe reac e/i fscm 11293
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Terminal Type And Quantity
28 printed circuit
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Features Provided
radiation hardened and electrostatic sensitive
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Special Features
cbbl
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Operating Temp Range
-55.0/+125.0 deg celsius
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Part Name Assigned By Controlling Agency
microcircuit,sram,32k x 8(cy7c197)
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Memory Capacity
128kx8
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Inclosure Configuration
leaded chip carrier
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Departure From Cited Designator
modified for nuclear hardness impact
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Voltage Rating And Type Per Characteristic
-0.5 volts minimum input and 6.0 volts maximum input
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Memory Device Type
ram
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Output Logic Form
complementary-metal oxide-semiconductor logic
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Storage Temp Range
-65.0/+150.0 deg celsius
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Inclosure Material
ceramic
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Purchase Description Identification
11293-15-1326285-1
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Case Outline Source And Designator
c-11 mil-m-38510
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.). and 81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in
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~1
specification format; excludes commercial catalogs, ind