NSN: 5962-01-372-5028
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Departure From Cited Designator
altered by programming,testing & marking
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Output Logic Form
bipolar metal-oxide semiconductor
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Features Provided
programmed and schottky and high impedance
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Purchase Description Identification
04939-717744154-009
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Operating Temp Range
-55.0/+125.0 deg celsius
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Hybrid Technology Type
monolithic
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End Item Identification
depot se rf t e/i fscm 04939
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Memory Device Type
prom
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Storage Temp Range
-65.0/+150.0 deg celsius
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Case Outline Source And Designator
d-3 mil-m-38510
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Inclosure Material
ceramic
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Time Rating Per Chacteristic
100.00 nanoseconds af output megawatts and 50.00 nanoseconds af output megawatts
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Terminal Surface Treatment
solder
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Part Name Assigned By Controlling Agency
microcircuit,digital,16,384 bit schottky,bipolar prom
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Specification/Standard Data
81349--38510/21002bja government specification
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Inclosure Configuration
dual-in-line
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Voltage Rating And Type Per Characteristic
-1.5 volts minimum absolute input and 5.5 volts maximum absolute input
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Maximum Power Dissipation Rating
1.02 watts
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Bit Quantity (Non-Core)
16384
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Current Rating Per Characteristic
100.00 milliamperes reverse current, dc nominal
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Terminal Type And Quantity
24 printed circuit
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~1
data on certain environmental and performanc
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Test Data Document
81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type