NSN: 5962-01-373-5207

Technical Characteristics

• Part Name Assigned By Controlling Agency

  integrated circuit,dielectrically isolated,256 x 4 field programmable read-only memory (prom) with three-state outputs (electrostatic sensitive)

• Special Features

  electrostatic discharge sens/hardness critical item

• Bit Quantity (Non-Core)

  1024

• Features Provided

  radiation hardened and electrostatic sensitive and 3-state output and dielectric isolated and monolithic and burn in and programmable

• Storage Temp Range

  -65.0/+175.0 deg celsius

• Word Quantity (Non-Core)

  256

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Inclosure Configuration

  flat pack

• Criticality Code Justification

  feat

• Terminal Type And Quantity

  16 beam lead

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Memory Device Type

  prom

• Time Rating Per Chacteristic

  6.00 nanoseconds minimum propagation delay time, high to low level output and 90.00 nanoseconds maximum propagation delay time, low to high level output

• Terminal Surface Treatment

  solder

• End Item Identification

  peacekeeper missile guidance control set,imu