NSN: 5962-01-373-5795

Technical Characteristics

• Special Features

  one time asynchronous programmable

• Case Outline Source And Designator

  d-9 mil-m-38510

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum applied and 7.0 volts maximum applied

• Specification/Standard Data

  67268-5962-90555 government standard

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Current Rating Per Characteristic

  -16.00 milliamperes average forward current averaged over a full 60-hz cycle not applicable

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Memory Device Type

  pal

• Hybrid Technology Type

  monolithic

• End Item Identification

  f16aircombfit e/i fscm 81755

• Input Circuit Pattern

  20 input

• Time Rating Per Chacteristic

  35.00 nanoseconds nominal access

• Nondefinitive Spec/Std Data

  l case and 01 type and a finish

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Features Provided

  asynchronous and monolithic and programmable

• Inclosure Material

  ceramic

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Part Name Assigned By Controlling Agency

  microcircuit,memory,digital,cmos,one time programmable,asynchronous,pald,monolithic silicon

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.). and 81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in

• ~1

  specification format; excludes commercial catalogs, ind