NSN: 5962-01-374-2038

Technical Characteristics

• Test Data Document

  96906-mil-std-130 standard (includes industry or association standards, individual manufactureer standards, etc.). and 96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.). and 81349-mil-i-43553

• Inclosure Configuration

  dual-in-line

• Memory Device Type

  eeprom

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Terminal Surface Treatment

  solder

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Terminal Type And Quantity

  16 printed circuit

• Current Rating Per Characteristic

  -30.00 milliamperes collector cutoff current, dc, with specified resistance between base and emitter microamperes and 5.00 milliamperes reverse current, dc microamperes

• Bit Quantity (Non-Core)

  2048

• Time Rating Per Chacteristic

  40.00 nanoseconds nominal access

• Purchase Description Identification

  s7040-mc8304418-0

• Features Provided

  high reliability and low current and high current and schottky and bipolar and high speed and electrically alterable

• Hybrid Technology Type

  monolithic

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Part Name Assigned By Controlling Agency

  microcircuit memory,512 x 4 bit bipolar prom

• End Item Identification

  4920002169141 e/i fscm 0c5u6

• ~1

  specification (includes engineering type bul