NSN: 5962-01-374-2366

Technical Characteristics

• Test Data Document

  81349-mil-i-43553 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc

• Time Rating Per Chacteristic

  40.00 nanoseconds af output megawatts

• Inclosure Configuration

  dual-in-line

• Memory Device Type

  eeprom

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Terminal Type And Quantity

  16 printed circuit

• Purchase Description Identification

  s7040-mc8304424-0

• Current Rating Per Characteristic

  -30.00 milliamperes collector cutoff current, dc, with specified resistance between base and emitter microamperes and 5.00 milliamperes reverse current, dc microamperes

• Bit Quantity (Non-Core)

  2048

• Hybrid Technology Type

  monolithic

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Part Name Assigned By Controlling Agency

  microcircuit memory,512 x 4 bit bipolar prom

• Features Provided

  schottky and bipolar and high speed and high reliability and high current and electrically alterable and low current and programmed

• End Item Identification

  4920002169141 e/i fscm 0c5u6