NSN: 5962-01-374-7983

Technical Characteristics

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Specification/Standard Data

  81349--38510/22402bya government specification

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Bit Quantity (Non-Core)

  262144

• Features Provided

  programmed and ultraviolet erasable and monolithic and electrostatic sensitive and w/transparent lid

• Hybrid Technology Type

  monolithic

• End Item Identification

  an/tyq-23(v)1 e/i fscm 13973

• Current Rating Per Characteristic

  125.00 milliamperes reverse current, dc absolute

• Purchase Description Identification

  13973-247513-134

• Time Rating Per Chacteristic

  200.00 nanoseconds af output megawatts

• Part Name Assigned By Controlling Agency

  microcircuit digital,262,144 bit,mos eprom

• Departure From Cited Document

  altered by programming & marking

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• Terminal Type And Quantity

  28 printed circuit

• Case Outline Source And Designator

  d-10 mil-m-38510

• Memory Device Type

  eprom

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  -0.6 volts minimum absolute input and 6.25 volts maximum absolute input

• ~1

  data on certain environmental and performanc