NSN: 5962-01-374-8582

Technical Characteristics

• ~1

  data on certain environmental and performanc

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• Terminal Type And Quantity

  24 printed circuit

• Inclosure Configuration

  dual-in-line

• Features Provided

  ultraviolet erasable and electrostatic sensitive and programmed and monolithic and w/heat sink

• Memory Device Type

  eprom

• Terminal Surface Treatment

  solder

• Maximum Power Dissipation Rating

  1.0 watts

• Voltage Rating And Type Per Characteristic

  -0.3 volts minimum total supply and 6.0 volts maximum total supply

• Case Outline Source And Designator

  d-3 mil-m-38510

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Departure From Cited Document

  altered by programming & marking

• Bit Quantity (Non-Core)

  48768

• Purchase Description Identification

  13973-247503-16

• End Item Identification

  an/tyq-23(v)1 e/i fscm 13973

• Hybrid Technology Type

  monolithic

• Part Name Assigned By Controlling Agency

  microcircuit digital,nmos 4kx8 uv erasable prom

• Specification/Standard Data

  67268-8001203ja government standard

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Output Logic Form

  n-type metal oxide-semiconductor logic

• Time Rating Per Chacteristic

  250.00 nanoseconds af output megawatts