NSN: 5962-01-375-0371

Technical Characteristics

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Criticality Code Justification

  feat

• Memory Device Type

  pal

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum power source and 7.0 volts maximum power source

• Features Provided

  ultraviolet erasable and monolithic and electrostatic sensitive and programmed

• Input Circuit Pattern

  22 input

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• End Item Identification

  eo lorops

• Time Rating Per Chacteristic

  25.00 nanoseconds maximum propagation delay

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Special Features

  electrostatic discharge senstive;altered item,device to be programmed is pn 5962-8753901la,cage 67268,filename 1058-u17.jed,sumcheck 68f2; nha pn 1372ae1058 cage 72314

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Current Rating Per Characteristic

  5.50 milliamperes forward current, nonrepetitive, maximum peak total value microamperes

• Maximum Power Dissipation Rating

  1.2 watts

• Part Name Assigned By Controlling Agency

  microcircuit programmed; microcircuits,memory,digital,cmos uv erasable,programmable array logic,monolithic silicon