NSN: 5962-01-375-7492
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Special Features
electrostatic discharge sens/hardness critical item; selected item; selected from p/n 5962-8961404mxx or 5962-8961405mxx,cage 67268
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Operating Temp Range
-55.0/+125.0 deg celsius
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Body Length
1.660 inches minimum and 1.680 inches maximum
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Criticality Code Justification
feat
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Memory Capacity
128k x 8
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Nuclear Hardness Critical Feature
hardened
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Features Provided
ultraviolet erasable and burn in, mil-std-883, class b and electrostatic sensitive and monolithic and radiation hardened and tested to mil-std-883 and selected item
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Body Height
0.200 inches minimum and 0.220 inches maximum
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Part Name Assigned By Controlling Agency
microcircuit,prom,128k x 8 (27c010); microcircuit,memory digital,cmos 128k x 8-bit uveprom,monolithic silicon
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Terminal Type And Quantity
32 printed circuit
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Output Logic Form
complementary-metal oxide-semiconductor logic
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Current Rating Per Characteristic
5.00 microamperes maximum input
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Storage Temp Range
-65.0/+150.0 deg celsius
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Inclosure Material
ceramic
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Special Test Features
selected and tested for radiation hardness
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Terminal Surface Treatment
solder
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Body Width
0.585 inches minimum and 0.605 inches maximum
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Maximum Power Dissipation Rating
330.0 milliwatts
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Time Rating Per Chacteristic
150.00 nanoseconds minimum access and 170.00 nanoseconds maximum access
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End Item Identification
hac/rmpe react basic
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Memory Device Type
eprom
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Inclosure Configuration
dual-in-line
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Voltage Rating And Type Per Characteristic
-0.6 volts minimum total supply and 7.0 volts maximum total supply