NSN: 5962-01-376-2192

Technical Characteristics

• Test Data Document

  96906-mil-std-1285 standard (includes industry or association standards, individual manufactureer standards, etc.). and 96906-mil-std-129 standard (includes industry or association standards, individual manufactureer standards, etc.). and

• Memory Device Type

  prom

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum total supply

• Terminal Type And Quantity

  28 printed circuit

• Features Provided

  programmed and electrostatic sensitive and bipolar and 3-state output

• Case Outline Source And Designator

  d-10 mil-m-38510

• Inclosure Configuration

  dual-in-line

• Bit Quantity (Non-Core)

  6144

• Part Name Assigned By Controlling Agency

  microciruit,digital,bipolar,logic sequencer(16x48x8)

• Output Logic Form

  bipolar metal-oxide semiconductor

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Hybrid Technology Type

  monolithic

• End Item Identification

  5895012224205

• Maximum Power Dissipation Rating

  650.0 milliwatts

• Current Rating Per Characteristic

  100.00 milliamperes peak forward surge current horsepower metric

• Special Features

  field-programmable

• Specification/Standard Data

  57957-c5118232 manufacturers source control and 57957-c5118445 manufacturers specification control

• ~1

  81349-mil-m-55565 specification (includes engineering type bu