NSN: 5962-01-376-2201

Technical Characteristics

• ~1

  96906-mil-std-129 standard (includes industry or association

• Features Provided

  3-state output and programmed and electrostatic sensitive and bipolar

• Memory Device Type

  prom

• Current Rating Per Characteristic

  100.00 milliamperes peak forward surge current horsepower metric

• Maximum Power Dissipation Rating

  650.0 milliwatts

• Hybrid Technology Type

  monolithic

• Input Circuit Pattern

  16 input

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Output Logic Form

  bipolar metal-oxide semiconductor

• Bit Quantity (Non-Core)

  6144

• Inclosure Configuration

  dual-in-line

• Case Outline Source And Designator

  d-10 mil-m-38510

• Terminal Type And Quantity

  28 printed circuit

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum total supply

• End Item Identification

  5895012604573 e/i fscm 80058

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Special Features

  field programmable

• Part Name Assigned By Controlling Agency

  microcircuit digital,bipolar,logic sequencer (16 x 48 x 8)

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Specification/Standard Data

  57957-5118252 manufacturers source control and 57957-5118445 manufacturers specification control

• Test Data Document

  96906-mil-std-1331 standard (includes industry or association standards, individual manufactureer standards, etc.). and 96906-mil-std-1285 standard (includes industry or association standards, individual manufactureer standards, etc.). and