NSN: 5962-01-386-2030

Technical Characteristics

• Features Provided

  3-state output and bipolar and monolithic and programmed and schottky and tested to mil-std-883 and electrostatic sensitive and high impedance and burn in, mil-std-883, class b and w/enable

• Word Quantity (Non-Core)

  1024

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Criticality Code Justification

  feat

• Current Rating Per Characteristic

  185.00 milliamperes reverse current, dc absolute

• Special Features

  altered item programmed using device m38510/20904bjx;esd

• Memory Device Type

  prom

• Body Width

  0.590 inches minimum and 0.610 inches maximum

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Bit Quantity (Non-Core)

  8192

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Time Rating Per Chacteristic

  90.00 nanoseconds maximum input to output access

• Body Height

  0.205 inches minimum and 0.225 inches maximum

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum input and 5.5 volts maximum input and -0.5 volts minimum power source and 7.0 volts maximum power source

• Case Outline Source And Designator

  d-3 mil-m-38510

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Body Length

  1.270 inches minimum and 1.290 inches maximum

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Input Circuit Pattern

  14 input

• Part Name Assigned By Controlling Agency

  microcircuit,digital,read only memory

• Output Logic Form

  transistor-transistor logic

• Maximum Power Dissipation Rating

  950.0 milliwatts

• End Item Identification

  an/fps-117