NSN: 5962-01-386-3166

Technical Characteristics

• Inclosure Configuration

  dual-in-line

• Memory Device Type

  eprom

• Case Outline Source And Designator

  d-10 mil-m-38510

• Terminal Type And Quantity

  28 printed circuit

• Voltage Rating And Type Per Characteristic

  6.5 volts maximum power source

• Features Provided

  burn in and hermetically sealed and programmed

• Maximum Power Dissipation Rating

  500.0 milliwatts

• Terminal Surface Treatment

  solder

• Inclosure Material

  ceramic

• Time Rating Per Chacteristic

  250.00 nanoseconds maximum delay

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Word Quantity (Non-Core)

  32768

• Bit Quantity (Non-Core)

  262144

• Operating Temp Range

  -55.0/+125.0 deg celsius