NSN: 5962-01-391-2513

Technical Characteristics

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc

• Part Name Assigned By Controlling Agency

  2k x 8 bit,prom

• Time Rating Per Chacteristic

  35.00 nanoseconds af output megawatts

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Hybrid Technology Type

  monolithic

• Specification/Standard Data

  67268-5962-88734 government standard

• Memory Device Type

  prom

• Nondefinitive Spec/Std Data

  03 type and l case and a finish

• Features Provided

  programmed and electrostatic sensitive

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Departure From Cited Designator

  programmed per:301018 (21877)

• Maximum Power Dissipation Rating

  550.0 milliwatts

• End Item Identification

  cv-3993/sys-2 e/i fscm 21877

• Case Outline Source And Designator

  d-9 mil-m-38510

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  24 printed circuit

• Voltage Rating And Type Per Characteristic

  4.5 volts minimum applied and 5.5 volts maximum applied

• Special Features

  one time programmable

• Bit Quantity (Non-Core)

  16384