NSN: 5962-01-407-8100

Technical Characteristics

• Maximum Power Dissipation Rating

  794.0 milliwatts

• Time Rating Per Chacteristic

  35.00 nanoseconds maximum propagation delay time, high to low level output and 35.00 nanoseconds maximum propagation delay time, low to high level output

• Specification/Standard Data

  81349-mil-m-38510/204 government specification

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Body Width

  0.245 inches minimum and 0.285 inches maximum

• Inclosure Configuration

  flat pack

• Criticality Code Justification

  feat

• Hybrid Technology Type

  monolithic

• Memory Device Type

  prom

• Bit Quantity (Non-Core)

  2048

• Current Rating Per Characteristic

  100.00 milliamperes forward current, nonrepetitive, maximum peak total value nominal

• Input Circuit Pattern

  10 input

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Body Length

  0.440 inches maximum

• Inclosure Material

  silicon

• Terminal Type And Quantity

  16 flat leads

• Body Height

  0.045 inches minimum and 0.085 inches maximum

• Case Outline Source And Designator

  f-5 mil-m-38510

• Word Quantity (Non-Core)

  512

• Features Provided

  bipolar and schottky

• Special Features

  terminal surface treatment is gold or solder or tin

• Test Data Document

  81349-mil-m-38510 specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type

• ~1

  data on certain environmental and performanc