NSN: 5962-01-408-0767
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Criticality Code Justification
cbbl
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Operating Temp Range
-55.0/+125.0 deg celsius
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Part Name Assigned By Controlling Agency
microcircuit,digital,memory (hci)
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Special Features
device is a 512k x 8 cmos uveprom;this is an altered item made from rc258-0249-010 which is selected from 258-0249-010 which is a 67268 5962-9175202mxa (27c040);case outline designator cdip2-t32 or gdip1-t32 as designated in mil-std-1835
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Bit Quantity (Non-Core)
4194304
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End Item Identification
milstar
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Memory Device Type
prom
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Terminal Type And Quantity
32 printed circuit
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Current Rating Per Characteristic
1.00 milliamperes reverse current, dc blank and 10.00 microamperes reverse current, dc microamperes
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Output Logic Form
complementary-metal oxide-semiconductor logic
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Storage Temp Range
-65.0/+150.0 deg celsius
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Features Provided
tested to mil-std-883 and radiation hardened and ultraviolet erasable and programmed and burn in, mil-std-883, class b and electrostatic sensitive and monolithic and w/enable
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder
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Voltage Rating And Type Per Characteristic
-0.6 volts minimum power source and 7.0 volts maximum power source
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Time Rating Per Chacteristic
200.00 nanoseconds maximum delay
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Capitance Rating Per Characteristic
12.00 input picofarads maximum and 15.00 output picofarads maximum
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Maximum Power Dissipation Rating
330.0 milliwatts
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Input Circuit Pattern
27 input
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Inclosure Configuration
dual-in-line
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Word Quantity (Non-Core)
524288