NSN: 5962-01-411-6183

Technical Characteristics

• Memory Device Type

  first-in first-out

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Hybrid Technology Type

  monolithic

• Features Provided

  electrostatic sensitive and burn in and hermetically sealed and monolithic

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Terminal Type And Quantity

  16 printed circuit

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Inclosure Configuration

  dual-in-line

• Bit Quantity (Non-Core)

  256

• Voltage Rating And Type Per Characteristic

  4.5 volts minimum power source and 5.5 volts maximum power source