NSN: 5962-01-420-6437
Microcircuits, Electronic
MICROCIRCUIT,MEMORY
5962 - Microcircuits, Electronic
MICROCIRCUIT,MEMORY
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Technical Characteristics
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Special Features
altered item programmed using 67268 5962-8552702lx iaw pg639700-01
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Inclosure Configuration
dual-in-line
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Word Quantity (Non-Core)
2048
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Body Width
0.310 inches maximum
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Terminal Type And Quantity
24 printed circuit
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Input Circuit Pattern
14 input
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Bit Quantity (Non-Core)
16384
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Body Length
1.280 inches maximum
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Maximum Power Dissipation Rating
1.02 watts
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Output Logic Form
bipolar metal-oxide semiconductor
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Criticality Code Justification
cbbl
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Part Name Assigned By Controlling Agency
microcircuit, digital, 2k x 8, production i553 extended microcode prom;microcircuit, digital, bipolar, 2k x 8 bit registered prom, monolithic silicon
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Operating Temp Range
-55.0/+125.0 deg celsius
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Body Height
0.200 inches maximum
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Time Rating Per Chacteristic
25.00 nanoseconds af output torr
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End Item Identification
pacer dawn
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Features Provided
programmed and monolithic and asynchronous and bipolar and burn in, mil-std-883, class b and electrostatic sensitive and hermetically sealed and tested to mil-std-883
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Capitance Rating Per Characteristic
8.00 input picofarads maximum and 15.00 output picofarads maximum
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Memory Device Type
prom
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Current Rating Per Characteristic
-30.00 milliamperes collector cutoff current, dc, with specified resistance between base and emitter microamperes and 5.00 milliamperes reverse current, dc microamperes
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Test Data Document
96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).
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Storage Temp Range
-65.0/+150.0 deg celsius
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Inclosure Material
ceramic
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Terminal Surface Treatment
solder
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Voltage Rating And Type Per Characteristic
-0.5 volts minimum input and 5.5 volts maximum input and -0.5 volts minimum power source and 7.0 volts maximum power source
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Case Outline Source And Designator
d-9 mil-m-38510