NSN: 5962-01-444-9516

Technical Characteristics

• Storage Temp Range

  -65.0/+135.0 deg celsius

• Features Provided

  monolithic and electrostatic sensitive and synchronous and parallel operation

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Word Quantity (Non-Core)

  1024

• Criticality Code Justification

  cbbl

• Time Rating Per Chacteristic

  25.00 nanoseconds af output megawatts

• Memory Device Type

  first-in first-out

• End Item Identification

  f-15i

• Maximum Power Dissipation Rating

  1.2 watts

• Inclosure Configuration

  dual-in-line

• Terminal Type And Quantity

  28 printed circuit

• Special Features

  descriptive designator cdip3-t28 or gdip4-t28

• Inclosure Material

  silicon

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Terminal Surface Treatment

  solder

• Part Name Assigned By Controlling Agency

  microcircuit,memory,cmos,1k x 8 parallel synchronous fifo,monolithic silicon

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Bit Quantity (Non-Core)

  8192

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).