NSN: 5962-01-468-5930

Technical Characteristics

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum input and 7.0 volts maximum input

• Memory Device Type

  eprom

• Inclosure Configuration

  dual-in-line

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Part Name Assigned By Controlling Agency

  microcircuit, memory, digital, cmos uv erasable programmable logic array, monolithic silicon

• Maximum Power Dissipation Rating

  1.1 watts

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Features Provided

  monolithic and programmable and electrostatic sensitive and ultraviolet erasable

• Inclosure Material

  ceramic and glass

• Terminal Type And Quantity

  28 printed circuit

• Special Features

  generic p/n 7c335, circuit function-12 macrocell epld, fmax3-83 mhz, data retention-10 years minimum, endurance-25 erase/write cycles minimum