NSN: 5962-01-470-2375

Technical Characteristics

• Design Function And Quantity

  1 memory

• Part Name Assigned By Controlling Agency

  microcircuit, memory digital, bicmos, one time programmable, programmable logic device, monolithic silicon

• Features Provided

  monolithic and burn in

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Maximum Power Dissipation Rating

  1.0 watts

• Terminal Surface Treatment

  solder

• End Item Identification

  joint starts target radar system

• Terminal Type And Quantity

  20 printed circuit

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum input and 7.0 volts maximum input

• Inclosure Configuration

  dual-in-line

• Special Features

  16-input 6-output registered and-or invert logic array

• Output Logic Form

  bipolar metal-oxide semiconductor

• Operating Temp Range

  -55.0/+125.0 deg celsius