NSN: 5962-01-476-6121

Technical Characteristics

• Part Name Assigned By Controlling Agency

  microcircuits, memory, digital, cmos 512k x 8-bit uveprom, monolithic silicon

• Maximum Power Dissipation Rating

  330.0 milliwatts

• Memory Device Type

  eprom

• Inclosure Configuration

  dual-in-line

• Word Quantity (Non-Core)

  512

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Special Features

  blank eprom to be programmed to p/n specified under master eprom; 5962-9175204mxa

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Terminal Type And Quantity

  32 printed circuit

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Features Provided

  monolithic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  -0.6 volts minimum power source and 7.0 volts maximum power source