NSN: 5962-01-481-1636

Technical Characteristics

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Inclosure Configuration

  flat pack

• Features Provided

  bipolar and schottky and programmable and monolithic and electrostatic sensitive and 3-state output

• Word Quantity (Non-Core)

  32768

• Maximum Power Dissipation Rating

  739.0 milliwatts

• Memory Device Type

  prom

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Body Width

  0.250 inches nominal

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Part Name Assigned By Controlling Agency

  microcircuits, digital, 256 bit, schottky, bipolar. programmable read-only memory (prom), monolithic silicon

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum input and 7.0 volts maximum input

• Special Features

  altered/circuit-32 word/8 bit per word prom with tri-state output

• Body Length

  0.375 inches nominal

• Terminal Type And Quantity

  16 leadless