NSN: 5962-01-500-9683

Technical Characteristics

• Inclosure Configuration

  leadless flat pack

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Maximum Power Dissipation Rating

  500.0 milliwatts

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum input and 7.0 volts maximum input

• Part Name Assigned By Controlling Agency

  microcircuit, digital, advanced bipolar cmos, quadruple bus buffer gate with three-state ouyputs, ttl compatible inputs, monolithic silicon

• Output Logic Form

  bipolar metal-oxide semiconductor

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Features Provided

  electrostatic sensitive and monolithic

• Design Function And Quantity

  1 gate, bus buffer

• Special Features

  generic p/n 54abt125

• Terminal Type And Quantity

  20 leadless

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Storage Temp Range

  -65.0/+150.0 deg celsius