NSN: 5962-01-501-6907

Technical Characteristics

• Time Rating Per Chacteristic

  30.00 nanoseconds af output megawatts

• Part Name Assigned By Controlling Agency

  microcircuit, memory, digital, cmos, uv eraseable programmable logic array, monolithic silicon

• Maximum Power Dissipation Rating

  1.2 watts

• Inclosure Configuration

  dual-in-line

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum input and 7.0 volts maximum input

• Special Features

  generic p/n v2500bql/lid shall be transparent tp permit ultraviolet light erasure

• Terminal Type And Quantity

  40 printed circuit

• Inclosure Material

  ceramic and glass

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Test Data Document

  96906-mil-std-883 standard (includes industry or association standards, individual manufactureer standards, etc.).

• Features Provided

  electrostatic sensitive and monolithic and erasable and compatible cmos and programmable

• Memory Device Type

  pal

• Operating Temp Range

  -55.0/+125.0 deg celsius