NSN: 5962-01-506-3280

Technical Characteristics

• Maximum Power Dissipation Rating

  1.5 watts

• Memory Device Type

  pal

• Hybrid Technology Type

  monolithic

• Special Features

  use program 356a1289p3.jed to program 356a1409p16 or atf22v10bq-15jc

• Inclosure Configuration

  leaded chip carrier

• Input Circuit Pattern

  22 input

• Operating Temp Range

  -40.0/+85.0 deg celsius

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Features Provided

  electrically alterable and programmable

• Terminal Type And Quantity

  28 j-hook

• End Item Identification

  used in 114e6472g1

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  -0.5 volts minimum total supply and 7.0 volts maximum total supply

• Time Rating Per Chacteristic

  15.00 nanoseconds af output megawatts

• Part Name Assigned By Controlling Agency

  micrcocicuit, memory, digital, cmos, ee programmable array logic, monolithic silicon