NSN: 5962-01-538-6106

Technical Characteristics

• Features Provided

  programmed and electrostatic sensitive and monolithic

• Memory Device Type

  ram

• Output Logic Form

  complementary-metal oxide-semiconductor logic

• Inclosure Material

  ceramic

• Terminal Surface Treatment

  solder

• Input Circuit Pattern

  25 input

• Terminal Type And Quantity

  28 printed circuit

• Inclosure Configuration

  dual-in-line

• Memory Capacity

  8kx9