NSN: 5962-01-575-5250

Technical Characteristics

• Features Provided

  high speed and bidirectional and programmable and low noise and asynchronous and high performance and w/open collector

• Operating Temp Range

  -40.0/+85.0 deg celsius

• Memory Device Type

  eeprom

• Current Rating Per Characteristic

  25.00 microamperes maximum output

• Special Features

  power save mode; tristate buffer; 166.6 mhz max freq; w/flip flop; 120 i/os; 50kohm; adjustable slew rate; 5000 usable gates; surface mount

• Voltage Rating And Type Per Characteristic

  4.6 volts nominal total supply

• Output Logic Form

  complementary-metal oxide-semiconductor logic and transistor-transistor logic

• Terminal Type And Quantity

  144 pin

• Inclosure Configuration

  flat pack

• Time Rating Per Chacteristic

  7.50 nanoseconds agc threshold maximum

• Part Name Assigned By Controlling Agency

  programmable eeprom logic array