NSN: 5962-01-582-7986

Technical Characteristics

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Inclosure Configuration

  dual-in-line

• ~1

  +14.0 v; integrated uv erase dose 7258 w. sec/cm

• Special Features

  temperature under bias -55 deg c to +125 deg c; voltage at any pin with respect to ground -2.0 v to +7.0 v (1); voltage on input pins with respect to ground during programming -2.0 v to +14.0 v (1); programming voltage with respect to ground -2.0 v to

• Part Name Assigned By Controlling Agency

  high speed uv erasable programmable logic device

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Memory Device Type

  programmable

• Terminal Type And Quantity

  24 pin

• Output Logic Form

  complementary-metal oxide-semiconductor logic